Abstract:We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two models -- the TSMC RF foundry model and our own ADS-HDM -- to simulate the Si CMOS TeraFET performance and compare their predictions with respective experimental data. Both models are implemented in the commercial circuit simulation software Keysight Advanced Design System (ADS). We find that the compact model TSMC RF is capable to predict the detector responsivity and its dependence on frequency and gate voltage with good accuracy up to the highest frequency of 1.2 THz covered in this study. This frequency is well beyond the tool's intended operation range for 5G communications and 110-GHz millimeter wave applications. We demonstrate that our self-developed physics-based ADS-HDM tool, which relies on an extended one-dimensional hydrodynamic transport model and can be adapted readily to other material technologies, has high predictive qualities comparable to those of the foundry model. We use the ADS-HDM to discuss the contribution of diffusive and plasmonic effects to the THz response of Si CMOS TeraFETs, finding that these effects, while becoming more significant with rising frequency, are never dominant. Finally, we estimate that the electrical NEP (perfect power coupling conditions) is on the order of 5 pW/$\sqrt{\rm{Hz}}$ at room-temperature.

TCAD Simulation of Gate-Enclosed MOSFET for Terahertz Detector

Improved Performance of CMOS Terahertz Detectors by Reducing MOSFET Parasitic Capacitance

Performance Enhancement of Cmos Terahertz Detector

Monte Carlo Investigation of Silicon MOSFET for Terahertz Detection

Performance Enhancement of CMOS Terahertz Detector by Drain Current

TeraFET terahertz detectors with spatially non-uniform gate capacitances

Design and Measurement of CMOS Terahertz Thermal Detector with Gate-antenna and NMOS Transistors

A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process

An Analytical Model for Terahertz Detection in Cylindrical Surrounding-Gate MOSFETs

Terahert Detection Analysis Of Nanowire Gated Field Effect Transistor

Modeling of antenna-coupled Si MOSFETs in the Terahertz Frequency Range

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$_x$P$_{1-x}$ gate layer

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

A Generic Numerical Model for Detection of Terahertz Radiation in Mos Field-Effect Transistors

A High-Performance Terahertz Detector Based on a Graded Channel GaN High-Electron-mobility Transistor with a Recessed Gate

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Performance Evaluation of Tunneling Field Effect Transistor on Terahertz Detection

An analytic model of silicon-based nanowire gated field effect transistor terahertz signal detection

Impact of Short Channel Effects on Detection of Terahertz Radiation in Silicon Nanowire MOSFETs

Arbitrarily Polarized CMOS Terahertz Detector with Silicon-Based Plasmonic Antenna

Numerical Simulation on the Voltage Response of Field Effect Transistor by Focused Terahertz Radiation