Abstract:As the commercial CMOS (Complementary Metal Oxide Semiconductor) transistor model will lose the accuracy in a high frequency range,a nonlinear RCL transmission line model based on classic kinetic theory was developed with ADS software.The accuracy of proposed model and the working principle of the CMOS in THz range were discussed based on measured data.A simulation system for the nonlinear RCL transmission line model was constructed,and simulation results were compared with that of commercial model and the difference between the proposed model and the commercial CMOS model in THz range was analyzed.Then,the frequency responses of current CMOS transistors were tested,tested data were compared with those of the simulation data from the two kinds of models.The results demonstrate that the proposed model has been improved the prediction accuracy.Finally,the effects of channel size of transistor on the scattering effect of carriers were analyzed and conditions of transistor to turn on ballistic mode were given with 3σ rules.The results show that the difference between the two models mainly focuses on the inductance part,which could represent the momentum conservation of carriers in transistor channel and if the scattering effect could be neglected or not.Compared with the commercial model,the prediction accuracy for the optimal resonant frequency of a detector has improved by 0.3％,and that for the optimal working bandwidth of the detector has increased about 10％.This study provides a good foundation for the accurate establishment and simulation analysis of CMOS transistor models.

Performance Enhancement of Cmos Terahertz Detector

Improved Performance of CMOS Terahertz Detectors by Reducing MOSFET Parasitic Capacitance

Performance Enhancement of CMOS Terahertz Detector by Drain Current

TCAD Simulation of Gate-Enclosed MOSFET for Terahertz Detector

TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor

Design and Measurement of CMOS Terahertz Thermal Detector with Gate-antenna and NMOS Transistors

Performance Evaluation of Tunneling Field Effect Transistor on Terahertz Detection

A Generic Numerical Model for Detection of Terahertz Radiation in Mos Field-Effect Transistors

Monte Carlo Investigation of Silicon MOSFET for Terahertz Detection

Modeling of antenna-coupled Si MOSFETs in the Terahertz Frequency Range

Modeling of terahertz resonant detection of MOS field effect transistor operating in all regions under optical beating mode

Terahertz CMOS Transistor Model and Experimental Analysis

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process

An Analytical Model for Terahertz Detection in Cylindrical Surrounding-Gate MOSFETs

Optimization of Terahertz Monolithic Integrated Frequency Multiplier Based on Trap-Assisted Physics Model of THz Schottky Barrier Varactor

TeraFET terahertz detectors with spatially non-uniform gate capacitances

The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector

Crosstalk Suppression in CMOS Terahertz Detectors by Using a Mushroom-Like AMC Structure.

Smaller Antenna-Gate Gap for Higher Sensitivity of GaN/AlGaN HEMT Terahertz Detectors

Resonant Detection of Modulated Terahertz Radiation in Micromachined High-Electron-mobility Transistor