Abstract:Studying the nonlinear photoresponse of different materials, including III-V semiconductors, two-dimensional materials and many others, is attracting burgeoning interest in the terahertz (THz) field. Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and low cost is a high priority for advancing performance imaging or communication systems in daily life. However, as THz detectors continue to shrink in size, the impact of the hot-electron effect on device performance is impossible to ignore, and the physical process of THz conversion remains elusive. To reveal the underlying microscopic mechanisms, we have implemented drift-diffusion/hydrodynamic models via a self-consistent finite-element solution to understand the dynamics of carriers at the channel and the device structure dependence. By considering the hot-electron effect and doping dependence in our model, the competitive behavior between the nonlinear rectification and hot electron-induced photothermoelectric effect is clearly presented, and it is found that the optimized source doping concentrations can be utilized to reduce the hot-electron effect on the devices. Our results not only provide guidance for further device optimization but can also be extended to other novel electronic systems for studying THz nonlinear rectification.

Numerical Study on Heterodyne Terahertz Detection in Field Effect Transistor

A Generic Numerical Model on Heterodyne Terahertz Detection in Field Effect Transistor

A Numerical Method To Simulate Thz-Wave Generation And Detection Of Field-Effect Transistors

A Generic Numerical Model for Detection of Terahertz Radiation in Mos Field-Effect Transistors

Numerical Simulation on the Voltage Response of Field Effect Transistor by Focused Terahertz Radiation

A Numerical Study on Thz-Wave Generation and Detection of Metal-Oxide-Semiconductor Field-Effect Transistor

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Nonresonant response characteristics to terahertz radiation of FETs: Influence of magnetic field

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Study Progess on FET-based Terahertz Wave Generation and Detection

Analysis of Substrate Effect in Field Effect Transistor Terahertz Detectors

Numerical simulation on nonlinear response of two-dimensional electron plasmas in the field effect transistor structures

Modeling of terahertz resonant detection of MOS field effect transistor operating in all regions under optical beating mode

TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor

Terahertz wave generation and detection analysis of silicon nanowire MOS field-effect transistor

Performance Evaluation of Tunneling Field Effect Transistor on Terahertz Detection

An analytical terahertz detection theory for Silicon-based nanowire MOS field effect transistor

A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process

The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector

Terahert Detection Analysis Of Nanowire Gated Field Effect Transistor

Integration of a Field-Effect-transistor Terahertz Detector with a Diagonal Horn Antenna