Abstract:Studying the nonlinear photoresponse of different materials, including III-V semiconductors, two-dimensional materials and many others, is attracting burgeoning interest in the terahertz (THz) field. Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and low cost is a high priority for advancing performance imaging or communication systems in daily life. However, as THz detectors continue to shrink in size, the impact of the hot-electron effect on device performance is impossible to ignore, and the physical process of THz conversion remains elusive. To reveal the underlying microscopic mechanisms, we have implemented drift-diffusion/hydrodynamic models via a self-consistent finite-element solution to understand the dynamics of carriers at the channel and the device structure dependence. By considering the hot-electron effect and doping dependence in our model, the competitive behavior between the nonlinear rectification and hot electron-induced photothermoelectric effect is clearly presented, and it is found that the optimized source doping concentrations can be utilized to reduce the hot-electron effect on the devices. Our results not only provide guidance for further device optimization but can also be extended to other novel electronic systems for studying THz nonlinear rectification.

Modeling of terahertz resonant detection of MOS field effect transistor operating in all regions under optical beating mode

A Generic Numerical Model for Detection of Terahertz Radiation in Mos Field-Effect Transistors

A Generic Numerical Model on Heterodyne Terahertz Detection in Field Effect Transistor

Nonresonant response characteristics to terahertz radiation of FETs: Influence of magnetic field

Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Numerical Study on Heterodyne Terahertz Detection in Field Effect Transistor

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

An Analytical Model for Terahertz Detection in Cylindrical Surrounding-Gate MOSFETs

A Numerical Study on Thz-Wave Generation and Detection of Metal-Oxide-Semiconductor Field-Effect Transistor

Numerical Simulation on the Voltage Response of Field Effect Transistor by Focused Terahertz Radiation

Performance Enhancement of Cmos Terahertz Detector

An analytical terahertz detection theory for Silicon-based nanowire MOS field effect transistor

An analytic model of silicon-based nanowire gated field effect transistor terahertz signal detection

Terahert Detection Analysis Of Nanowire Gated Field Effect Transistor

Study Progess on FET-based Terahertz Wave Generation and Detection

Monte Carlo Investigation of Silicon MOSFET for Terahertz Detection

The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector

Performance Enhancement of CMOS Terahertz Detector by Drain Current

TCAD Simulation of Gate-Enclosed MOSFET for Terahertz Detector

New Insight on Terahertz Rectification in a Metal–Oxide–Semiconductor Field-Effect Transistor Structure