Abstract:In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs, graphene, etc.) -- has matured and led to a practically applied detector technology. This has been supported by the development of powerful device simulation tools which take into account relevant collective carrier dynamics and mixing processes in various approximations. These tools mostly model carrier transport in 1D and they are usually geared towards continuous-wave illumination of the device and small-signal response. Depending on their implementation, it may not be possible readily to simulate large-signal and pulsed operation. Another approximation which may lead to unsatisfactory results is the 1D restriction to calculate only the longitudinal electric field components. Especially at the edges of the gate electrode, solving of the 2D Poisson equation promises better results. This contribution introduces a stable way to solve the 2D Poisson equation self-consistently with the hydrodynamic transport equations including the numerically challenging convection term. We employ a well-balanced approximate Harten-Lax-van-Leer-Contact Riemann solver. The approach is well suited for a future treatment of transient and large-signal cases as well as the Dyakonov-Shur instability. The 2D treatment also generically extends the model beyond the gradual-channel approximation and allows to calculate the FET's response at high THz frequencies where the gate-to-channel potential acquires a non-local character. Model calculations are performed for the exemplary case of a 65-nm Si CMOS TeraFET in the isothermal approximation.

Numerical Simulation on the Voltage Response of Field Effect Transistor by Focused Terahertz Radiation

Numerical Study on Heterodyne Terahertz Detection in Field Effect Transistor

Nonresonant response characteristics to terahertz radiation of FETs: Influence of magnetic field

A Generic Numerical Model on Heterodyne Terahertz Detection in Field Effect Transistor

Numerical simulation on nonlinear response of two-dimensional electron plasmas in the field effect transistor structures

A Generic Numerical Model for Detection of Terahertz Radiation in Mos Field-Effect Transistors

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

A Numerical Method To Simulate Thz-Wave Generation And Detection Of Field-Effect Transistors

Simulation of Radiative Cooling with FETD Method

Field-induced Hot-Electron Emission Model for Wide-Band-gap Semiconductor Nanostructures

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

A Numerical Study on Thz-Wave Generation and Detection of Metal-Oxide-Semiconductor Field-Effect Transistor

Modeling of terahertz resonant detection of MOS field effect transistor operating in all regions under optical beating mode

Study Progess on FET-based Terahertz Wave Generation and Detection

The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector

Performance Evaluation of Tunneling Field Effect Transistor on Terahertz Detection

2D hydrodynamic simulation of TeraFETs beyond the gradual-channel approximation for transient, large-signal or ultrahigh-frequency simulations

Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs

High intensity study of THz detectors based on field effect transistors

TCAD Simulation of Gate-Enclosed MOSFET for Terahertz Detector