Abstract:Due to the advantages of high power density, high efficiency, and great potential in extreme temperature environments, the GaN high electron mobility transistor (HEMT) device is widely used in circuit systems at high or low temperatures. However, its electrical performance is sensitive to the ambient temperature. Therefore, it is essential to build a model that can accurately characterize the electrical performance of GaN HEMTs at different ambient temperatures, which is also essential for precise circuit design. With the analysis of experiment and theory on the GaN HEMT at different ambient temperatures, an improved model for temperature effect on the DC characteristics of the GaN HEMT is proposed based on EEHEMT model. Considering the influence of the ambient temperature on electrical properties of the GaN HEMT, such as the threshold voltage, the knee voltage, and the saturated current, the model establishes a temperature-dependent function for key parameters in the formula of the drain-source current. Through Verilog-A implementation and simulation on the ICCAP software, the improved model accurately reflects the trend of the electrical performance changes of the GaN HEMT at different ambient temperatures. To further verify the model in this work, the on-wafer measurements at different temperatures including -55, -25, 25 and 75 degrees C are carried out for GaN HEMTs with different sizes, which are developed by Nanjing Electronic Devices Institute. Compared with the measured data, the output characteristics and the transfer characteristics simulated by the proposed model are accurate in an ambient temperature range of -55-75 degrees C, with a relative fitting error less than 5%. The result shows that the improved model is of guiding significance in analyzing the direct current performance and high reliability design of circuits at different temperatures.

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Analysis of the Thermal Effects of Gaasfets under the High-Power Electromagnetic Pulses

Thermal Transient Response Of Gaas Fets Under Intentional Electromagnetic Interference (Iemi)

Thermal modeling, analysis, and management of high-power GaN transistors

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Thermal Accumulation Effects on the Transient Temperature Responses in LDMOSFETs Under the Impact of a Periodic Electromagnetic Pulse

High Speed Transient Thermal Simulation of GaN HEMT Devices

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Electro-Thermal Simulation of GaN HEMT by Finite Element Method

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver

Non-linear thermal resistance model for the simulation of high power GaN-based devices

Modeling of Temperature Effect on DC Characteristics of Micro Wave GaN Devices

Research and Application of Temperature-sensitive Characteristics of Gate Parameters in GaN high electron mobility transistors

Thermal spreading resistance of GaN HEMTs with heat source heating studied by hybrid Monte Carlo-diffusion simulations

Full 3D Thermal Simulation of GaN HEMT using Ultra-Fast Self-Adaptive Computations Driven by Experimentally Determined Thermal Maps