Abstract:Exact assessment of self-heating is of great importance to the thermal management of electronic devices, especially when completely considering the cross-scale heat conduction process. The existing simulation methods are either based on convectional Fourier's law or limited to small system sizes, making it difficult to deal with noncontinuum thermal transport efficiently. In this paper, a hybrid phonon Monte Carlo diffusion method is adopted to predict device temperature in ballistic-diffusive regime. Heat conduction around the heat generation region and boundaries are simulated by phonon Monte Carlo (MC) method, while the other domain is by Fourier's law. The temperature of the hybrid method is higher than that of Fourier's law owing to phonon ballistic transport, and the calculation efficiency of the hybrid method is remarkably improved compared with phonon MC simulation. Furthermore, the simulation results indicate that the way of modeling self-heating has a remarkable impact on phonon transport. The junction temperature of the heat source (HS) scheme can be larger than that of the heat flux (HF) scheme, which is opposite to the result under Fourier's law. In the HS scheme, the enhanced phonon-boundary scattering counteracts the broadening of the heat source, leading to a stronger ballistic effect and higher temperatures. The conclusion is verified by a one-dimensional analytical model. This work has opened up an opportunity for the fast and extensive thermal simulations of cross-scale heat transfer in electronic devices and highlighted the influence of heating schemes.

Full 3D Thermal Simulation of GaN HEMT using Ultra-Fast Self-Adaptive Computations Driven by Experimentally Determined Thermal Maps

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Electro-Thermal Simulation of GaN HEMT by Finite Element Method

Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

High Speed Transient Thermal Simulation of GaN HEMT Devices

Nonlinear compact thermal modeling of self-adaptability for GaN high-electron-mobility-transistors using Gaussian process predictor and ensemble Kalman filter

Non-linear thermal resistance model for the simulation of high power GaN-based devices

Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver

A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit

A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs

Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor

Hybrid Monte Carlo-Diffusion Studies of Modeling Self-Heating in Ballistic-Diffusive Regime for Gallium Nitride HEMTs

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

Hybrid Electrothermal Simulation of a 3-D Fin-Shaped Field-Effect Transistor Based on GaN Nanowires

Analytical Thermal Model for AlGaN/GaN HEMTs Using Conformal Mapping Method

Nonlinear Thermal Analysis of AlGaN/GaN HEMTs With Temperature-Dependent Parameters

Study of Thermal Simulation Technology for GaN Power Devices

Analytical Modelling of High Temperature Characteristics on the DC Responses for Schottky-gate AlGaN/GaN HEMT Devices