Abstract:Various simulations of a GaN HEMT are used to study the behaviors of two different energy-transport models: the Fermi kinetics transport model and a hydrodynamics transport model as it is implemented in the device simulator Sentaurus from Synopsys. The electron transport and heat flow equations of the respective solvers are described in detail. The differences in the description of electron flux and the discretization methods are highlighted. Next, the transport models are applied to the same simulated device structure using identical meshes, boundary conditions, and material parameters. Static simulations show the numerical convergence of Fermi kinetics to be consistently quadratic or faster, whereas the hydrodynamic model is often sub-quadratic. Further comparisons of large signal transient simulations reveal the hydrodynamic model produces certain anomalous electron ensemble behaviors within the transistor structure. The fundamentally different electron dynamics produced by the two models suggest an underlying cause for their different numerical convergence characteristics.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to evaluate and compare the performance of two different energy transport models in simulating gallium nitride high - electron - mobility transistors (GaN HEMTs). These two models are: 1. **Fermi Kinetics Transport (FKT)**: This is an energy transport solver based on the Boltzmann transport equation. It uses the moment method to handle the electron heat flux and adopts the heat capacity of an ideal Fermi gas as a closure relation. 2. **Commercial Hydrodynamics Transport (CHT)**: This is a hydrodynamics transport model implemented in the Synopsys Sentaurus device simulator. It uses Fourier's law to describe the electron heat flux and relies on empirical field - dependent and temperature - dependent mobility models. ### Main problems - **Numerical convergence**: The study found that in static simulations, the numerical convergence of the Fermi Kinetics Transport model is usually quadratic or faster, while the convergence of the hydrodynamics model is often sub - quadratic. This means that in some cases, the CHT model may require more iterations to achieve the same accuracy. - **Abnormal behavior in large - signal transient simulations**: In large - signal transient simulations, the CHT model produces certain abnormal electron ensemble behaviors, which may be due to the different descriptions of electron kinetics in the two models. - **Physical applicability and accuracy**: By comparing the output characteristics (such as current - voltage characteristics, electron temperature distribution, etc.) of the two models under the same simulation conditions, the researchers hope to determine which model can more accurately describe the physical processes in GaN HEMTs. ### Specific goals 1. **Comparison of system equations and discretization schemes**: Describe in detail the equations and discretization methods used by the two models to understand the differences between them. 2. **Comparison of simulation parameters and results**: Conduct simulations under the same grid, boundary conditions, and material parameters, and compare the output characteristics of the two models, such as current density, electron temperature, etc. 3. **Analysis of numerical convergence characteristics**: Evaluate the numerical convergence speed of the two models by analyzing the residuals of the Newton solver, especially for the performance under different gate and drain bias conditions. ### Summary This paper aims to reveal the advantages and disadvantages of the Fermi Kinetics Transport model and the Commercial Hydrodynamics Transport model in simulating GaN HEMTs through detailed simulations and comparisons, thereby providing a basis for choosing a more suitable simulation tool. Particular attention is paid to the numerical convergence and physical applicability of the models, which are especially important for large - signal transient simulations in high - frequency power applications.

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