Abstract:An accurate physical model for GaN high-electron-mobility-transistors (HEMTs) device is imperative and crucial for circuit design and technology optimization. In this paper, a scalable large-signal surface-potential (SP) model of AlGaN/GaN HEMTs is presented. The drain current model is capable of accurately modeling the self-heating effect and trapping effect. The self-heating effect is modeled by embedding temperature increment into free-carrier mobility model, and the trapping effect is modeled by introducing an indirect variable effective gate voltage V-gseff. Moreover, the scaling and multiharmonic characteristics of the SP model are studied for the first time. The geometry-dependent thermal resistance R-ths is identified by the electrothermal finite-element method simulations, which is scalable with the gate width W and power dissipations P-diss of the device. Single-tone on-wafer load-pull measurements at operating frequency 8 GHz is carried out for verification purpose. Accurate predictions of the static (dc) I-V, pulsed-gate-and-drain I - V, S-parameters up to 40 GHz and large-signal harmonic performance (the fundamental, second-and third-harmonics output power, and power-added efficiency) for the devices with different gate peripheries have been achieved by the proposed model. The results of this paper can pave the way for the full application of the physical-based model in circuits design.

Heterostructure HEMT electronic device simulation with density functional theory

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Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Single Field HIE FDTD Solver with Nonuniform Grid Stratagem for More Fine Structure

Full Geometric Simulation of Miniaturized GaN Double-Heterojunction High Electron Mobility Transistors by a Multiscale Approach Coupling Quantum and Semi-Classical Transport

Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Numerical Simulation of AlXGa1-XN/AlN/GaN HEMT

Numerical analysis of heterostructure semiconductor devices

Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver

Modeling of interface scattering of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

One-dimensional self-consistent numerical model and two-dimensional electron gases for AlGaN/GaN

Simulation of Carrier Transport in Heterostructures Using the 2d Self-Consistent Full-Band Ensemble Monte Carlo Method

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Experimentation and Simulation for Cap Gate AlGaN/GaN HEMT Power Devices

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A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs