Abstract:This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger-Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current-voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC Interface

Prediction of high-density and high-mobility two-dimensional electron gas at Al<inf>x</inf>Ga<inf>1−x</inf>N/4H-SiC interface

Numerical Simulation of AlXGa1-XN/AlN/GaN HEMT

Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures

Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT

A Novel InxGa1−xN/InN Heterostructure Field-Effect Transistor with Extremely High Two-Dimensional Electron-Gas Sheet Density

Investigation on the sources of 2DEG in AlxGa1-xN/GaN HEMT

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Quantum Channel AlGaN/GaN/AlGaN High Electron Mobility Transistor

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor

A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors