Abstract:This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger-Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current-voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

A Novel InxGa1−xN/InN Heterostructure Field-Effect Transistor with Extremely High Two-Dimensional Electron-Gas Sheet Density

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Theoretical Study of Improved Two‐dimensional Electron Gas Density in AlGaN/GaN/AlGaN Double Heterostructure

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Prediction of high-density and high-mobility two-dimensional electron gas at Al<inf>x</inf>Ga<inf>1−x</inf>N/4H-SiC interface

Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC Interface

Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Ferroelectric domain induced giant enhancement of two-dimensional electron gas density in ultrathin-barrier AlGaN/GaN heterostructures

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect