Abstract:A two-dimensional hole gas (2DHG) induced by polarization charges at the GaN/AlGaN hetero-interface is attracting much attention because of its potential to develop p-channel transistors required for GaN complementary logic integrated circuits. This platform is compatible with commercial AlGaN/GaN n-channel electronics, but the performance of GaN p-channel transistors has been far behind. In this work, 2DHGs in GaN/AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy have been investigated. The Al composition of the AlGaN barrier has been pushed as high as possible without obvious strain relaxation, and the record high 2DHG sheet density and conductivity on the GaN/AlGaN/GaN platform have been obtained. By adopting a parallel conduction model, a dependent relationship of the 2DHG density on temperature has been extracted. The temperature dependent Hall-effect results have demonstrated that the 2DHG density boosts by 75 times and 46 times at room temperature and 77 K, respectively, when the Al composition is pushed from 0.18 to 0.45 for the AlGaN barriers. The 2DHG sheet density reaches 3.6 × 10 13 and 2.1 × 10 13 cm −2 at room temperature and 77 K, respectively, and the lowest sheet resistance is 8.9 kΩ/□ at 77 K. Such a 2DHG is beneficial for fabrication of p-channel GaN transistors with lower on-resistance on the already-industrialized platform.

Theoretical Study of Improved Two‐dimensional Electron Gas Density in AlGaN/GaN/AlGaN Double Heterostructure

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Influence of relaxation on the two-dimensional electron-gas in Al xGa1-xN/GaN/AlyGa1-yN double heterostructure with compressively strained GaN layer

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

Function of Quantum-Confinement Effect in the AlGaN∕AlN∕GaN Heterostructure with an AlN Interfacial Layer

A Novel InxGa1−xN/InN Heterostructure Field-Effect Transistor with Extremely High Two-Dimensional Electron-Gas Sheet Density

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Influence of Doping on the Two-Dimensional Electron Gas Distribution in Algan/Gan Heterostructure Transistors

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Strain-induced Enhancement of 2D Electron Gas Density in AlGaN/GaN Heterojunction: A First-principles Study

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

PROGRESS IN TWO-DIMENSIONAL ELECTRON GAS IN GROUP-Ⅲ-NITRIDE HETEROSTRUCTURES

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures