Abstract:Al content in Al/sub x/Ga/sub 1-x/N/GaN double heterostructure (DH) is improved high up to x=1 by using a compressively strained GaN quantum well (QW) layer. By solving the coupled Schrodinger and Poisson equations self-consistently, we investigate the two-dimensional electron gas (2DEG) distributions and sheet densities in Al/sub x/Ga/sub 1-x/N/GaN DHs. Comparing to the 2DEG in Al/sub 0.5/Ga/sub 0.5/N/GaN single heterostructure (SH), the 2DEG sheet density in a comparable AlN/GaN/Al/sub 0.5/Ga/sub 0.5/N DH is nearly doubled from 2.31/spl times/10/sup 13/cm/sup -3/ to 4.47 /spl times/ 10/sup 13/cm/sup -3/, mainly owing to the additional piezoelectric polarization in the GaN QW. It is also shown that 2DEG in the GaN QW is increased with increasing the Al content of the top barrier due to the stronger polarization effect and large conduction band offset at the Al,Ga/sub 1-x/N/GaN interface. Increasing the lower barrier thickness will reduce the 2DEG density in the GaN QW while the 2DEG at the lower Al/sub y/Ga/sub 1-y/N/GaN interface is increased, making the total 2DEG density almost a constant.

Influence of relaxation on the two-dimensional electron-gas in Al xGa1-xN/GaN/AlyGa1-yN double heterostructure with compressively strained GaN layer

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Influence of Strain Relaxation of the AlxGa1−xN Barrier on Transport Properties of the Two-Dimensional Electron Gas in Modulation-Doped AlxGa1−xN/GaN Heterostructures

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Theoretical Study of Improved Two‐dimensional Electron Gas Density in AlGaN/GaN/AlGaN Double Heterostructure

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Strain-induced Enhancement of 2D Electron Gas Density in AlGaN/GaN Heterojunction: A First-principles Study

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

MICROSTRUCTURES AND STRAIN RELAXATION IN MODULATION-DOPED <font>Al</font><sub>x</sub><font>Ga</font><sub>1-x</sub><font>N</font>/<font>GaN</font> HETEROSTRUCTURES

PROGRESS IN TWO-DIMENSIONAL ELECTRON GAS IN GROUP-Ⅲ-NITRIDE HETEROSTRUCTURES

Temperature-dependent Strain Relaxation of the AlGaN Barrier in AlGaN∕GaN Heterostructures with and Without Si3N4 Surface Passivation

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Influence of Different Surface-Passivation Dielectrics on High-Temperature Strain Relaxation of AlGaN in AlGaN∕GaN Heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures