Abstract:A heterostructure with variable Al contents have been used in emission layer of photocathode to improve quantum efficiency, because difference in Al content of adjacent sublayers would generate a built-in electric field to help electron transport. In this article, based on use of first principles, we have studied structure, stability and electronic features of AlxGa1−xN/GaN heterostructure. The AlxGa1−xN/GaN heterostructure is obtained by finding the most stable stacking situation of bilayer GaN and introducing Al content in bottom layer. The cohesive energy, band structure and density of states are calculated. The results revel that introduction of Al content can increase cohesive energy of multilayer GaN and make system more stable. It will also magnify band-gap of heterostructure. The results of DOS show that increasing of Al content in AlxGa1−xN monolayer enhance contribution of Al s-orbitals and p-orbitals, while contribution of Ga s-orbitals and p-orbitals decline. Finally, through analysis of stability and electronic properties of AlxGa1−xN/AlyGa1−yN heterostructure, we have found that influence of size of Al contents far exceeds that of position of Al atom.

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Scattering Behaviour of A Two-Dimensional Electron Gas Induced by Al Composition Fluctuation in Alxga1-Xn Barriers in Alxga1-Xn/Gan Heterostructures

Comparative study on stability and electronic properties of two-dimensional AlxGa1−xN/GaN heterostructure with variable Al contents

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Influence of relaxation on the two-dimensional electron-gas in Al xGa1-xN/GaN/AlyGa1-yN double heterostructure with compressively strained GaN layer

PROGRESS IN TWO-DIMENSIONAL ELECTRON GAS IN GROUP-Ⅲ-NITRIDE HETEROSTRUCTURES

One-dimensional self-consistent numerical model and two-dimensional electron gases for AlGaN/GaN

Influence of Doping on the Two-Dimensional Electron Gas Distribution in Algan/Gan Heterostructure Transistors

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers