Abstract:A heterostructure with variable Al contents have been used in emission layer of photocathode to improve quantum efficiency, because difference in Al content of adjacent sublayers would generate a built-in electric field to help electron transport. In this article, based on use of first principles, we have studied structure, stability and electronic features of AlxGa1−xN/GaN heterostructure. The AlxGa1−xN/GaN heterostructure is obtained by finding the most stable stacking situation of bilayer GaN and introducing Al content in bottom layer. The cohesive energy, band structure and density of states are calculated. The results revel that introduction of Al content can increase cohesive energy of multilayer GaN and make system more stable. It will also magnify band-gap of heterostructure. The results of DOS show that increasing of Al content in AlxGa1−xN monolayer enhance contribution of Al s-orbitals and p-orbitals, while contribution of Ga s-orbitals and p-orbitals decline. Finally, through analysis of stability and electronic properties of AlxGa1−xN/AlyGa1−yN heterostructure, we have found that influence of size of Al contents far exceeds that of position of Al atom.

Scattering Behaviour of A Two-Dimensional Electron Gas Induced by Al Composition Fluctuation in Alxga1-Xn Barriers in Alxga1-Xn/Gan Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Influence of Barrier Thickness on Luminescence Lifetime of the Two-Dimensional Electron Gas in Inaln/Gan Heterostructures

Weak Localization and Magnetointersubband Scattering Effects in an Alxga1-Xn/Gan Two-Dimensional Electron Gas

Investigation on two-dimensional electron gas in AlxGa1-xN/GaN heterostructures by using Schottky C-V measurement

Study On The Subband Properties Of Alxga1-X/Gan Modulation-Doped Heterostructures

Magnetointersubband Oscillations Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Comparative study on stability and electronic properties of two-dimensional AlxGa1−xN/GaN heterostructure with variable Al contents

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures