Abstract:We reported the effect of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN∕GaN multiple quantum wells (MQWs) by photoluminescence (PL) and high-resolution x-ray diffraction techniques. The MQW samples on (0001)-plane sapphire substrates were prepared with a ramping method by metalorganic chemical deposition. It was found that the structural or interface quality of the MQW system improved as the deposition time of barrier layers increased from 10 to 14min, but lattice relaxation was still observed. The relaxation degree decreases from 33% to 6% as the deposition time increases. Temperature-dependent PL measurements from 12 to 300K indicated that the integrated PL intensities start to decay rapidly as temperature rises above 50K for the sample with the shorter deposition time, and above 100K for the sample with the longer deposition time. The luminescence thermal quenching of the two samples suggests the two nonradiative recombination centers based on a fit to Arrhenius plot of the normalized integrated PL intensity over the entire temperature range. The first centers at higher temperatures show less difference for the two samples. The second centers at lower temperatures can be attributed to the trapping of carriers at the rough interface for the sample with the shorter deposition time and to the thermal quenching of bound excitons for the sample with the longer deposition time, respectively.

Influence of Barrier Thickness on Luminescence Lifetime of the Two-Dimensional Electron Gas in Inaln/Gan Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Scattering Behaviour of A Two-Dimensional Electron Gas Induced by Al Composition Fluctuation in Alxga1-Xn Barriers in Alxga1-Xn/Gan Heterostructures

Influence of the Deposition Time of Barrier Layers on Optical and Structural Properties of High-Efficiency Green-Light-emitting InGaN∕GaN Multiple Quantum Wells

Study on Carrier Lifetimes in InGaN Multi‐quantum Well with Different Barriers by Time‐resolved Photoluminescence

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

The Effect of Inserting Strain-Compensated Ganas Layers on the Luminescence Properties of Gainnas/Gaas Quantum Well

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Photoluminescence Related to the Two Dimensional Electron Gas in Modulation-Doped Al_x Ga_(1-x)N/GaN Heterostructures

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier*

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Effects of TMIn Flow Rate During Quantum Barrier Growth on Multi-quantum Well Material Properties and Device Performance in GaN-Based Laser Diodes

Effects of Algaas Cladding Layers on the Luminescence of Gaas/Gaas1-Xbix/Gaas Heterostructures

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Function of Quantum-Confinement Effect in the AlGaN∕AlN∕GaN Heterostructure with an AlN Interfacial Layer

Luminescent Properties of Gaasbi/Gaas Double Quantum Well Heterostructures

Photoluminescence of Algaas/Ingaas/Gaas Pseudomorphic Hemts with Different Thickness of Spacer Layer