Abstract:Electro‐thermal properties in N‐polar AlxGa1‐xN‐channel heterostructures (x = 15% to 90%) are reported and compared to their GaN counterparts by decoupling the contributions from various sublayers and interfaces. The thermally resistive AlGaN buffer layer predominantly leads to a relatively lower thermal conductivity in AlxGa1‐xN heterostructure. The electro‐thermal properties of such heterostructures remain nearly unchanged for a wide range of temperatures. Ultra‐wide bandgap semiconductor AlGaN is a promising candidate for high‐power and high‐frequency electronics. AlGaN‐heterostructures with nitrogen (N)‐polarity can offer added benefits of low‐leakage and large drive current. However, electro‐thermal transport in such heterostructures remains unexplored, although they are essential for electronic device functionality. Here, the thermal and electrical properties of N‐polar AlxGa1‐xN‐channel heterostructures (Al percentage, x = 15–90%) are explored and compared with their GaN counterpart. The thermal measurements uncover that the effective thermal resistance of the thin channel and barrier layers are similar in magnitudes for N‐polar‐ AlGaN and GaN heterostructures, however, the total effective thermal conductivity in N‐polar AlGaN heterostructure is ≈4× smaller. This reduction originates from the larger thermal resistance of the thick Al0.15Ga0.85N buffer layer within the AlGaN stack. N‐polar AlxGa1‐xN stack displays a thermal conductivity almost independent of temperature, measured from room temperature up to 200 °C. Hall measurements of an N‐polar Al0.30Ga0.70N‐channel heterostructure further reveal that electrical properties such as resistivity, carrier density, and mobility remain nearly unchanged with temperature, indicating the dominance of alloy‐phonon scattering in such material systems. These results offer important insights into material‐device co‐design and reliability of N‐polar AlGaN heterostructures.

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Two-dimensional Electron and Hole Gases in InxGa1−xN/AlyGa1−yN/GaN Heterostructure for Enhancement Mode Operation

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

High Temperature Performance of GaN and AlxGa1-xN/GaN Heterostructures

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

High Temperature Dependence of the Density of Two-Dimensional Electron Gas in Al 0.18 Ga 0.82 N/GaN Heterostructures

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Improved electrical properties in AlGaN∕GaN heterostructures using AlN∕GaN superlattice as a quasi-AlGaN barrier

Probing the Thermal and Electrical Properties of Ultrawide Bandgap Nitrogen‐Polar AlGaN Heterostructures