Abstract:Near lattice matched Al0.81In0.19N/GaN heterojunction structures are compared with conventional Al0.3Ga0.7N/GaN heterojunctions in terms of the sheet density and mobility and their dependence on barrier and spacer layer parameters. With the insertion of an AlN spacer, the mobility of both structures is improved dramatically. Self-consistent solution of Poisson-Schrodinger equations was developed in order to determine the band structure and carrier distribution in these GaN based heterostructures in an effort to gain insight into the experimental observations. Surface donor states were included to account for the origin of electrons in 2DEG, which is treated as charge neutralization conditions in the simulation. Also the change in the piezoelectric polarization due to the electromechanical coupling effect, and shift of band gap caused by uniaxial strain were both included in the calculations. The calculated sheet density is close to the measured values, especially for the AlGaN samples investigated, but a notable difference was noted in the AlInN cases. The discrepancy is confirmed to be caused by the existence of a Ga-rich layer on the top of AlN spacer during the growth interruption, which can split the 2DEG into two channels with different mobilities and lower the overall sheet density. When the modifications made necessary by this GaN layer are taken into account in our model for the AlInN barrier case, the calculations match with the experimental data. When the spacer thickness increase from 0.3 to 3 nm, the total sheet density was found to slightly increase experimentally, which agreed with the theoretical prediction.

Improved electrical properties in AlGaN∕GaN heterostructures using AlN∕GaN superlattice as a quasi-AlGaN barrier

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

Growth and Characterization of AlGaN/GaN Heterostructure Using Unintentionally Doped AlN/GaN Superlattices As Barrier Layer

Theoretical Study of Improved Two‐dimensional Electron Gas Density in AlGaN/GaN/AlGaN Double Heterostructure

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Ferroelectric domain induced giant enhancement of two-dimensional electron gas density in ultrathin-barrier AlGaN/GaN heterostructures

High Electron Mobility And Low Sheet Resistance In Lattice-Matched Alinn/Aln/Gan/Aln/Gan Double-Channel Heterostructure

Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures

Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers

BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor

Function of Quantum-Confinement Effect in the AlGaN∕AlN∕GaN Heterostructure with an AlN Interfacial Layer

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer