Abstract:Near lattice matched Al0.81In0.19N/GaN heterojunction structures are compared with conventional Al0.3Ga0.7N/GaN heterojunctions in terms of the sheet density and mobility and their dependence on barrier and spacer layer parameters. With the insertion of an AlN spacer, the mobility of both structures is improved dramatically. Self-consistent solution of Poisson-Schrodinger equations was developed in order to determine the band structure and carrier distribution in these GaN based heterostructures in an effort to gain insight into the experimental observations. Surface donor states were included to account for the origin of electrons in 2DEG, which is treated as charge neutralization conditions in the simulation. Also the change in the piezoelectric polarization due to the electromechanical coupling effect, and shift of band gap caused by uniaxial strain were both included in the calculations. The calculated sheet density is close to the measured values, especially for the AlGaN samples investigated, but a notable difference was noted in the AlInN cases. The discrepancy is confirmed to be caused by the existence of a Ga-rich layer on the top of AlN spacer during the growth interruption, which can split the 2DEG into two channels with different mobilities and lower the overall sheet density. When the modifications made necessary by this GaN layer are taken into account in our model for the AlInN barrier case, the calculations match with the experimental data. When the spacer thickness increase from 0.3 to 3 nm, the total sheet density was found to slightly increase experimentally, which agreed with the theoretical prediction.

Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Studies on the InAlN/InGaN/InAlN/InGaN Double Channel Heterostructures with Low Sheet Resistance

Growth and Characterization of Modulation-Doped Alxga1-Xn/Gan Heterostructures

Two-dimensional Electron and Hole Gases in InxGa1−xN/AlyGa1−yN/GaN Heterostructure for Enhancement Mode Operation

A 2 Nm Low Temperature Gan Spacer To Improve The Transport Properties Of Two-Dimensional Electron Gas In Algan/Inaln/Aln/Gan Heterostructures

Influences of AlN passivation dielectric on AlGaN/GaN heterostructure and its high-temperature properties

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Improved electrical properties in AlGaN∕GaN heterostructures using AlN∕GaN superlattice as a quasi-AlGaN barrier

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

The Effect of Long-Duration High-Temperature Annealing in an Air Ambient on the Properties of AlGaN∕GaN Heterostructures

PROGRESS IN TWO-DIMENSIONAL ELECTRON GAS IN GROUP-Ⅲ-NITRIDE HETEROSTRUCTURES

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

High Electron Mobility And Low Sheet Resistance In Lattice-Matched Alinn/Aln/Gan/Aln/Gan Double-Channel Heterostructure

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer