Abstract:The effects of interface oxidation on the transport behavior of the 2-D electron gas (2DEG) in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN (PEALD-AlN) passivation were investigated using temperature-dependent Hall-effect and X-ray photoelectron spectroscopy (XPS) characterizations. AlGaN/GaN heterostructure with a 4-nm-thick PEALD-AlN passivation exhibits good 2DEG transport behavior and stability at moderately high temperature (e.g., 275 °C). However, serious oxidation of the AlN/GaN (cap layer) interface occurs as the sample is heated up to 400 °C in low-pressure atmosphere, as verified by an increased Ga-O bond in Ga 3d core-level spectra. The oxidation leads to a significant reduction of 2.47 × 1012 cm−2 in the 2DEG density in the channel. A modified AlN passivation structure with Al2O3/AlN (10/4 nm) stack is shown to be able to effectively suppress the oxidation of the AlN/GaN interface, demonstrating an enhanced 2DEG density and high-temperature stability even when the sample is heated up to 500 °C. Based on XPS and 2DEG recovery experiments, it is suggested that acceptor-like deep levels have been generated in the near-surface region of AlGaN/GaN heterostructure because of the oxidation, and trapping of these deep levels results in significant depletion of the 2DEG in the channel. The effects of PEALD-AlN passivation on the strain in the AlGaN barrier of AlGaN/GaN heterostructures are also evaluated with high-resolution X-ray diffraction technique.

The Effect of Long-Duration High-Temperature Annealing in an Air Ambient on the Properties of AlGaN∕GaN Heterostructures

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

Effect of high temperature AlN interlayer on the performance of AlGaN/GaN properties

Influences of AlN passivation dielectric on AlGaN/GaN heterostructure and its high-temperature properties

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

High-temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures

High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors

Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers

Influence of Different Surface-Passivation Dielectrics on High-Temperature Strain Relaxation of AlGaN in AlGaN∕GaN Heterostructures

A 2 Nm Low Temperature Gan Spacer To Improve The Transport Properties Of Two-Dimensional Electron Gas In Algan/Inaln/Aln/Gan Heterostructures

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

Effects of Interface Oxidation on the Transport Behavior of the Two-Dimensional-electron-gas in AlGaN/GaN Heterostructures by Plasma-Enhanced-atomic-layer-deposited AlN Passivation

Effect Of A High Temperature Aln Buffer Layer Grown By Initially Alternating Supply Of Ammonia On Algan/Gan Heterostuctures

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

High Temperature Electron Transport Properties of Algan/Gan Heterostructures with Different Al-Contents