Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

LIU Zhong-tao,HAN Yan-jun,ZHANG Xian-peng,XUE Xiao-lin,CHEN Dong,WANG Lai,LUO Yi

DOI: https://doi.org/10.3969/j.issn.1001-5868.2007.04.015

2007-01-01

Abstract:The effect of the thermal annealing temperature on the electrical and optical properties of Mg-doped InGaN/GaN heterostructures in O 2 ambient was systematically investigated.The current-voltage characteristics and surface sheet resistance measurements show that,compared with p-GaN,the optimum annealing temperature of p-InGaN/GaN heterostructures is lower and the nonalloyed Ni/Au ohmic contacts can be obtained.It is suggested that relative narrower bandgap of InGaN,strong polarization effect in p-InGaN/GaN heterosturctures,and equilibrium vapor pressure of nitrogen over InN higher than that over GaN are the main reasons for the above results.Furthermore,in the photoluminescence spectrum at 10 K of the as-grown p-InGaN/GaN heterostructures,there are two peaks centered at 2.95 eV and 2.25 eV respectively,whose intensities gradually decrease when the thermal annealing temperature increases.To explain the photoluminescence spectra,the recombination mechanism between H-related complex and Mg-acceptor,in which donor-like compensating center play an important role,was proposed.