Abstract:Effects of rapid thermal annealing (RTA) on the structural properties were investigated in undoped GaN film grown by rf-plasma-assisted molecular beam epitaxy (MBE). Detailed characterizations of the photoluminescence (PL), high-resolution X-ray diffraction and low-frequency noise were conducted on both the as-grown and annealed films. PL and X-ray diffraction measurements showed that the crystallinity of the films improved with RTA at 800 degreesC with significant reduction in the yellow emission. Annealing at 900 degreesC and 1000 degreesC resulted in an increase in the FWHM of the Ti-ray diffraction, indicative of thermal decomposition of the materials. The results are in excellent agreement with our study of low-frequency noise, which demonstrates similar trend in the magnitudes of the Hooge parameters as a function of the annealing temperature, The temperature dependence of the voltage noise power spectra S-nu(f) was examined from 400 K to 80 K in the frequency range between 30 Hz and 100 kHz, At the low-frequency range the fluctuation is dominated by 1/f(gamma) noise, and for f > 1 kHz the noise is dominated by G-R noise processes. Our experimental results show that 800 degreesC is the optimal temperature for RTA, which results in substantial improvements in both the optical, structural and noise properties for the material, whereas annealing at 1000 degreesC is found to result in significant material degradation.

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped Gan

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Effect of Annealing on Photoluminescence Properties of Neon Implanted GaN

Photoluminescence of Mg-Doped Gan with Different Mg Concentrations after Annealing at Different Temperatures

Effects of Si ion implantation and post-annealing on yellow luminescence from GaN

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

Effects of isochronal thermal annealing and hydrogenation on photoluminescence from n-type GaN films grown by metalorganic vapor phase epitaxy

Annealing of GaN-InGaN Multi Quantum Wells: Correlation between the Bandgap and Yellow Photoluminescence

Effect of Si ion implantation in GaN and its thermal annealing temperature on yellow luminescence

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

Reduction of Yellow and Blue Luminescence in Si-doped GaN by Rapid Thermal Annealing

Effect of Annealing on Photoluminescence and Microstructures of Ingan/Gan Multi-Quantum Well with Mg-Doped P-Type Gan

Effects of Rapid Thermal Annealing on the Structural Properties of GaN Thin Films

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

Effect of annealing on photoluminescence of passivated porous silicon

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

High‐Temperature Annealing of AlGaN

Effects of in situ Annealing on Optical and Structural Properties of GaN Epilayers Grown by HVPE

Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride