Abstract:We investigated the excitation intensity (Φ) dependent photoluminescence (PL), at room temperature (RT), from GaN-based metal-insulator-semiconductor structures under gate bias (VG) from accumulation to deep depletion resulting in variations of the space charge region width. We found that depending on VG, different Φ-dependencies of the YL band energy position (blueshift or redshift), shape (band enlargement or narrowing) and intensity (signal saturation) can be obtained. In order to explain such an unusual YL behavior, we developed a phenomenological PL model, which is based on the solution of the three-dimensional Poisson's equation, current continuity equations and rate equations, and which takes into account the grain structure of GaN layers and the contribution of interface regions into recombination processes. Our model reproduced well the experimental Φ-dependencies of the YL band intensity. It also predicts that YL arises from the donor-acceptor pair (DAP) recombination in very limited areas (width of several nanometers) inside the depletion regions related to grain/grain interfaces and external crystal surfaces. On this basis, we showed that VG-controlled Φ-dependencies of the YL peak position and shape, can be well explained if we assume that YL is due to DAP-type transitions, in which the final state consists of the Coulomb interaction and strong interaction between the dipole moment of ionized DAP and the depletion region electric field. This recombination mechanism can play a significant role at RT, but should be negligible at low temperatures, where one can expect the significant reduction of interface barriers under illumination.

Effects of Si ion implantation and post-annealing on yellow luminescence from GaN

Effect of Si ion implantation in GaN and its thermal annealing temperature on yellow luminescence

C and Si Ion Implantation and the Origins of Yellow Luminescence in Gan

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped Gan

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Reduction of Yellow and Blue Luminescence in Si-doped GaN by Rapid Thermal Annealing

Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire

Photoluminescence from Si-based SiN X O Y Films

Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN

Mechanism of yellow luminescence in GaN at room temperature

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions

Luminescence from Si/SiO 2 with Si Implantation

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of annealing on photoluminescence of passivated porous silicon

Luminescence band evolution in Si implanted SiO2 layer upon high temperature annealing

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation