Abstract:In this paper, we report on the luminescence-center (LC)-mediated excitation of Er3+ as a function of annealing temperature in Er-doped Si-rich SiO2 (SRO) films fabricated by electron beam evaporation. It is found that the annealing temperature has significant effects on the emission of Er3+ and the specific optical-active point-defects called LCs within Er-doped SRO films. Different luminescence centers generated by the evolution of microstructures during annealing process act as efficient sensitizers for Er3+ in the films when the annealing temperature is below 1100 °C. Moreover, the temperature dependence of the energy coupling between LCs and Er3+ demonstrates the effective phonon-mediated energy transfer process. In addition, when the annealing temperature reaches 1100 °C, the decreased density of activable erbium ions induced by the aggregation of Er will bring detrimental effects on the emission of Er3+. It is demonstrated that an appropriate annealing process can be designed to achieve efficiently enhanced emissions from Er3+ ions by optimizing the density of LCs and the coupling between Er3+ and LCs.

Luminescence band evolution in Si implanted SiO2 layer upon high temperature annealing

Annealing-induced Blue Shift in Luminescence Band from Si-implanted SiO2 Layer

Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with A Thin Sio2 Layer

Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer

Luminescence from Si/SiO 2 with Si Implantation

Visible Photoluminescence Induced in Samples by Si Implantation

Photoluminescence of Tb3+ Doped SiNx Films Grown by Plasma-Enhanced Chemical Vapor Deposition

Correlation Between Luminescence and Structural Evolution of Si-rich Silicon Oxide Film Annealed at Different Temperatures

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Enhanced silicon band edge related radiation: Origin and applicability for light emitters

Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions

High Temperature Annealing Behaviors of Luminescent SiO x ∶H Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Photoluminescence from Si-based SiN X O Y Films

Intense UV-visible Photoluminescence from Si/sup +/ and N/sup +/ Co-Implanted Thermal SiO/sub 2/ Films

Photoluminescence from C+-Implanted Sinxoy Films Grown on Crystalline Silicon

Contribution of Multiple Emitting Centers to Luminescence from Si/SiO2 Multilayers with Step by Step Thermal Annealing

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon