Abstract:Photoluminescence from β-SiC nanocrystals embedded in SiO2 films at room temperature has been studied. The β-SiC nanocrystals were formed by carbon implantation into Si substrate at 35 keV with various dose, followed by post-implantation annealing at 1200 °C for 30 min in Ar ambient. Thermal dry-oxidation of the annealed samples at 1050 °C for 3 h was performed to form β-SiC nanocrystals embedded in SiO2 films. The composition and chemical state of C and Si atoms were characterized by non-Rutherford backscattering spectrometry and Fourier transform infrared spectroscopy, respectively. FTIR results show that β-SiC nanocrystals were formed in SiO2 films, and the amount of β-SiC nanocrystals in SiO2 films increases with increasing of implanted dose. The photoluminescent properties of the samples were measured at room temperature with a Hitachi F4010 fluorescence spectrophotometer using a xenon lamp as an excitation source (300 nm). Two distinguishable PL bands located at around 460 and 535 nm were observed in all the samples. The PL intensity significantly depends the implanted dose, and there is a critical implanted dose of 2×1017 cm−2, at which the PL intensity reaches the largest value.

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Annealing-induced Blue Shift in Luminescence Band from Si-implanted SiO2 Layer

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Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions

Photoluminescence from Si-based SiN X O Y Films

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO

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Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

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Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates