Abstract:In this paper, we report on the luminescence-center (LC)-mediated excitation of Er3+ as a function of annealing temperature in Er-doped Si-rich SiO2 (SRO) films fabricated by electron beam evaporation. It is found that the annealing temperature has significant effects on the emission of Er3+ and the specific optical-active point-defects called LCs within Er-doped SRO films. Different luminescence centers generated by the evolution of microstructures during annealing process act as efficient sensitizers for Er3+ in the films when the annealing temperature is below 1100 °C. Moreover, the temperature dependence of the energy coupling between LCs and Er3+ demonstrates the effective phonon-mediated energy transfer process. In addition, when the annealing temperature reaches 1100 °C, the decreased density of activable erbium ions induced by the aggregation of Er will bring detrimental effects on the emission of Er3+. It is demonstrated that an appropriate annealing process can be designed to achieve efficiently enhanced emissions from Er3+ ions by optimizing the density of LCs and the coupling between Er3+ and LCs.

Annealing-induced Blue Shift in Luminescence Band from Si-implanted SiO2 Layer

Luminescence band evolution in Si implanted SiO2 layer upon high temperature annealing

Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer

Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with A Thin Sio2 Layer

Luminescence from Si/SiO 2 with Si Implantation

Visible Photoluminescence Induced in Samples by Si Implantation

Correlation Between Luminescence and Structural Evolution of Si-rich Silicon Oxide Film Annealed at Different Temperatures

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Visible Photoluminescence Originated from Various Mechanisms During Step by Step Annealing

Evolution of Electroluminescence from Multiple Si-Implanted Silicon Nitride Films with Thermal Annealing

Enhanced Green to Red Photoluminescence in Thermally Annealed of Amorphous-Si:H/sio2 Multilayers

Contribution of Multiple Emitting Centers to Luminescence from Si/SiO2 Multilayers with Step by Step Thermal Annealing

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Enhanced silicon band edge related radiation: Origin and applicability for light emitters

Annealing and amorphous silicon passivation of porous silicon with blue light emission

High Temperature Annealing Behaviors of Luminescent SiO x ∶H Films

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films