Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

Correlation Between Luminescence and Structural Evolution of Si-rich Silicon Oxide Film Annealed at Different Temperatures

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

[Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Film and Er-doped Silicon-Rich Silicon Nitride Film and Its Annealing Behavior].

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Luminescence band evolution in Si implanted SiO2 layer upon high temperature annealing

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

High Temperature Annealing Behaviors of Luminescent SIOx : H Films

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Annealing-induced Blue Shift in Luminescence Band from Si-implanted SiO2 Layer

Enhanced Visible Photoluminescence from Nc-Si/Siox Films Deposited by Electron Beam Evaporation

Light Emission from Si Nanoclusters Formed at Low Temperatures

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Luminescence from Si/SiO 2 with Si Implantation

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride