Abstract:Er 3+ -Yb 3+ co-doped AI2O3 thin films were sputtered on SiO2 substrate at 350°C in argon-oxygen conditions by magnetron sputtering method. Thermal annealing was performed at high temperatures, ranging from 750° to 950°. The films annealed at different temperatures were characterized by Scanning Electron Microscopy, X-ray diffraction, Raman spectra and photoluminescence. The results show the smooth surface morphology of Er 3+ -Yb 3+ co-doped Al2O3 thin films fabricated with magnetron sputtering method. With increasing annealing temperature, the as-grown amorphous films became gradually crystallized. Sample annealed at 850° is shown to provide the highest photoluminescence intensity, which indicated that the formation of strained Er-O or Yb-O clusters will enhance the photoluminescence intensity.

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer

Enhanced Luminescence of Erbium Silicate: Interstitial Lithium Directly Regulates the Lattice Structure of Erbium Compound Crystals

Spectroscopic Properties Of Er3+ And Yb3+ Co-Doped Glass Ceramics Containing Srf2 Nanocrystals

Extraordinary Infrared Photoluminescence Efficiency of Er0.1Yb1.9SiO5 Films on SiO2/Si Substrates

Effects of Si and Er concentration on 1.54 μm photoluminescence from silica-based thin films

Fluorescence Enhancement and Structural Development of Sol–gel Derived Er3+-doped SiO2 by Yttrium Codoping

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

Strain induced enhancement of photoluminescence of Er<sup>3+</sup>-Yb<sup>3+</sup> co-doped AI<inf>2</inf>O<inf>3</inf> films

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

[Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Film and Er-doped Silicon-Rich Silicon Nitride Film and Its Annealing Behavior].

The Photoluminescence from (eu, Yb) Co-Doped Silicon-Rich Si Oxides

Photoluminescence Study of an Er-Doped Si-Rich SiO[sub x] Film