Abstract:Erbium doped Si-related compound films, with the 1540 nm emission coinciding with the minimum loss window of optical telecommunication, are regarded as appealing platforms of light sources for silicon photonics. In many previous reports, however, the unipolar carrier injection in silicon oxide/nitride films leads to favorable impact excitation of Er rather than sensitization, requiring high onset voltage that is not compatible with Si microelectronics. Silicon rich oxynitride (SRON) with tunable bandgap enables equivalent bipolar injection, yet there are few reports about light emitting devices (LEDs) based on this material with Er doping. Here, sensitized electroluminescence (EL) from erbium doped SRON with an onset voltage as low as 5 V has been demonstrated. The sensitization mechanism is evaluated by correlating the evolution of charge transport in SRON films subjected to different thermal treatments with that of Er3+ EL. The EL can be attributed to bipolar Poole-Frenkel injection of carriers and subsequent capture by Si dangling bond related trap states, followed by energy transfer to Er3+ ions. These results indicate that SRON serves as a promising Er3+ host for complementary metal-oxidesemiconductor (CMOS) compatible light sources.

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Photoluminescence of Erbium-doped porous silicon prepared by anodic etching of molecular beam epitaxial growth

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Enhanced 1.54 pm luminescence from erbium and yttrium co-doped porous silicon

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Enhancement of Sensitized Photoluminescence of Erbium Chloride Silicate Through Regulating Annealing

The Influence of Microstructure on Optical Properties of Porous Silicon

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Evolution of the Sensitized Er 3+ Emission by Silicon Nanoclusters and Luminescence Centers in Silicon-Rich Silica

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer

Study of Photoconductivity and Photoluminescence of Organic/porous Silicon Complexes

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films