Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Enhancement of Sensitized Photoluminescence of Erbium Chloride Silicate Through Regulating Annealing

Evolution of the Sensitized Er 3+ Emission by Silicon Nanoclusters and Luminescence Centers in Silicon-Rich Silica

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Photoluminenscence from Er3+ ions in a-SiNxOy films

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

The Modulation on Luminescence of Er3+-doped Silicon-Rich Oxide Films by the Structure Evolution of Silicon Nanoclusters.

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Nanosecond Field-Induced Quenching of the Luminescence from Er-Doped Silicon Nanocrystals

Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Different Effect of Nanocrystals on the Electroluminescence and Photoluminescence in Er-doped SiO2 Films

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Photoluminescence Around 1.54μm Wavelength from Erbium-doped Silicon Dependence on Annealing Temperature