Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Electroluminescence from Metal-Oxide-semiconductor Devices with Erbium-Doped CeO2 Films on Silicon

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Er‐Doped MgAl2O4 Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Electroluminescent Yb2O3:Er and Yb2Si2O7:Er Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Near-infrared electroluminescence from metal-oxide-semiconductor devices with erbium-doped gadolinium oxide on silicon

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Visible and Infrared Electroluminescence Property of Erbium Doped Silicon-rich SiO 2 MOS-LED

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Visible and Infrared Electroluminescence Property of Erbium Doped Silicon-rich SiO2MOS-LED

Enhancement of Sensitized Photoluminescence of Erbium Chloride Silicate Through Regulating Annealing

Room-temperature 1.54 Μm Electroluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited on N+-Si Substrates by Magnetron Sputtering

Electroluminescence from Er-doped GeO2 Nanofilms Fabricated by Atomic Layer Deposition on Silicon: Effect of Annealing Temperature on Film Properties

Electroluminescence from the Light-Emitting Devices with Erbium-Doped SrTiO3 Films on Oxidized Silicon Substrate

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Low Driving Voltage and High Reliability 1.54 Μm Electroluminescence from SnO2:Er/p-Si Heterostructured Devices Via Energy Transfer Effect

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Electroluminescence from Er-doped GeO 2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties

Bright Red Electroluminescence from Al2O3/Eu2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon