Light-Emitting Devices Based on Erbium-Doped Tio2/P(+)-Si Heterostructures: Engineering of Electroluminescence Via Aluminum Co-Doping

Yang,Yunpeng Li,Lu Jin,Xiangyang Ma,Deren Yang
DOI: https://doi.org/10.1063/1.4788679
IF: 4
2013-01-01
Applied Physics Letters
Abstract:We have recently reported erbium (Er)-related visible and infrared (∼1540 nm) electroluminescence (EL) from the light-emitting device (LED) based on Er-doped TiO2 (TiO2:Er)/p+-Si heterostructure, triggered by the energy transferred from oxygen-vacancy-related self-trapped excitons (STEs) to Er3+ ions in anatase TiO2. Herein, we further co-dope aluminum (Al) into the TiO2:Er film, which is also used to form heterostructure with p+-Si. The LED based on such heterostructure features the Er-related EL with the substantially suppressed visible emissions and the remarkably enhanced ∼1540 nm emission. The Al co-doping is proved not to substantially affect the amounts of oxygen-vacancy-related STEs and Er3+ ions in anatase TiO2. In this context, the above-mentioned engineering of Er-related EL is tentatively ascribed to the modification of crystal field around the Er3+ ions in anatase TiO2 by the Al co-doping.
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