Electroluminescence from light-emitting device with erbium-doped TiO2 film sputtered on p+-Si substrate: Enhancement effect of codoping zirconium

Chengtao Xia,Linlin Lu,Weijun Zhu,Jinxin Chen,Jiahao Cao,Deren Yang,Xiangyang Ma
DOI: https://doi.org/10.1016/j.tsf.2022.139160
IF: 2.1
2022-01-01
Thin Solid Films
Abstract:• Electroluminescence (EL) from LEDs with Er-doped TiO 2 films is enhanced by codoping Zr. • Anatase host is critical for the aforementioned enhanced EL. • LEDs with and without codoping Zr exhibit diode-like current-voltage characteristics. In our previous report, the erbium (Er)-related visible and near-infrared (NIR, ∼1.54 μ m) electroluminescence (EL) from the light-emitting device (LED) with Er-doped TiO 2 (TiO 2 :Er) film sputtered on the heavily boron-doped p -type silicon ( p + -Si) substrate thus forming the so-called TiO 2 :Er/ p + -Si heterostructure was realized. However, it is still a challenge to enhance the Er-related emissions from the above-structured LED. In this work, we have adopted the strategy of codoping zirconium (Zr) into TiO 2 host to significantly enhance the Er-related visible and NIR EL from the TiO 2 :Er/ p + -Si heterostructured LED. It is revealed that the oversize Zr 4+ ions substantially substitute for Ti 4+ ions in TiO 2 lattice. Such substitution results in somewhat distorted crystal field of Er 3+ ions incorporated into TiO 2 host, which increases the intra- 4f transition probabilities of Er 3+ ions thus enhancing the characteristic visible and NIR emissions.
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