A Light Emitting Device with TiO2:Er3+/ZnO Heterostructure for Enhanced Near-Infrared Electroluminescence

Yangyi Zhang,Jian Zhang,Wenjuan Yu,Xianbing Wang,Yuanliang Zhou,Li Dongke
DOI: https://doi.org/10.1088/1402-4896/ad4ad2
2024-05-15
Physica Scripta
Abstract:Near-infrared (NIR) electroluminescence (EL) devices based on Er3+ ions doped TiO2 emitting layer have been fabricated by employing a facile sol-gel method. The effect of Er3+ ion doping concentration on the EL performance of TiO2:Er3+ thin film devices was investigated. Moreover, a novel device with the core of TiO2:1%Er3+/ZnO heterostructure was designed and fabricated. The EL performance of the device with optimized Er3+ ion doping concentration and improved structure was significantly improved. The NIR EL-enabling voltage of the improved device is as low as ~5 V. The attenuated concentration quenching effect and the ZnO film as an electron blocking layer should contribute to the improved EL performance of the optimized device.
physics, multidisciplinary
What problem does this paper attempt to address?