Low-Voltage Driven Visible and Infrared Electroluminescence from Light-Emitting Device Based on Er-Doped Tio2/P(+)-Si Heterostructure

Yang,Lu Jin,Xiangyang Ma,Deren Yang
DOI: https://doi.org/10.1063/1.3678026
IF: 4
2012-01-01
Applied Physics Letters
Abstract:We report on visible and infrared electroluminescence (EL) from the light-emitting device based on Er-doped TiO2/p+-Si heterostructure. Under a forward bias voltage as low as 5.5 V, the device emits ∼1540 nm infrared light and visible light peaking at 522, 553, 564, and 663 nm, respectively, which are originated from Er3+ intra-4f transitions. It is found that the existence of sufficient oxygen vacancies in TiO2 is critical for triggering the Er-related EL. Furthermore, the energy transfer from the oxygen-vacancy-related excitons in TiO2 matrix to Er3+ ions is supposed to be responsible for the above-mentioned EL.
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