Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

Visible and near-infrared electroluminescence from TiO2/p+-Si heterostructured device

Near-Infrared Electroluminescence From Light-Emitting Devices Based On Nd-Doped Tio2/P(+)-Si Heterostructures

Low-Voltage Driven Visible and Infrared Electroluminescence from Light-Emitting Device Based on Er-Doped Tio2/P(+)-Si Heterostructure

Electroluminescence from Tio2/P(+)-Si Heterostructure

Room temperature visible electroluminescence from SrTiO3/p+-Si heterostructure

Color-tunable Electroluminescence from Eu-doped TiO_2/p^+-Si Heterostructured Devices: Engineering of Energy Transfer

Light-Emitting Devices Based on Erbium-Doped Tio2/P(+)-Si Heterostructures: Engineering of Electroluminescence Via Aluminum Co-Doping

Electroluminescence from the Light-Emitting Devices with Erbium-Doped SrTiO3 Films on Oxidized Silicon Substrate

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Multicolor and Near-Infrared Electroluminescence from the Light-Emitting Devices with Rare-Earth Doped Tio2 Films

Electroluminescence from light-emitting device with erbium-doped TiO2 film sputtered on p+-Si substrate: Enhancement effect of codoping zirconium

Electroluminescence of Heterostructures Formed by P+Si and TiO2 Films Derived from Oxidation of Sputtered Ti Films

Electroluminescence of SnO2∕p-Si heterojunction

Fairly pure ultraviolet electroluminescence from p-Si-based SiOx/ZnO/SiOx double-barrier device

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Enhancement of Electroluminescence from Tio2/P(+)-Si Heterostructure-Based Devices Through Engineering of Oxygen Vacancies in Tio2

Electroluminescence from Sno2/P(+)-Si Heterostructured Light-Emitting Device: Enhancing Its Intensity Via Capping A Tio2 Film

Silicene-supported TiO2 Nanostructures: a Theoretical Study of Electronic and Optical Properties

Enhanced Electroluminescence from Silicon-Based Light-Emitting Devices with Mg0.4zn0.6o/Erbium-Doped Zno Heterostructures by Using Ito/Moo3 Combined Anode

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction