Electroluminescence from Sno2/P(+)-Si Heterostructured Light-Emitting Device: Enhancing Its Intensity Via Capping A Tio2 Film

Jiang Hao-Tian,Yang,Wang Can-Xing,Zhu Chen,Ma Xiang-Yang,Yang De-Ren
DOI: https://doi.org/10.7498/aps.63.177302
IF: 0.906
2014-01-01
Acta Physica Sinica
Abstract:Low-voltage (current) driven electroluminescence (EL) has been achieved in the light-emitting device (LED) with a SnO2/p+-Si heterostructure, which is formed by sputtering SnO2 film on a p+-Si substrate, followed by annealing at 800 ℃ in O2 ambient. Furthermore, by means of capping a TiO2 film onto the SnO2 film, the modified LED exhibits significantly enhanced EL. The densification of SnO2 film as a result of the TiO2-capping is responsible for reducing the non-radiative centers. Moreover, the large refractive index and appropriate thickness of TiO2-capped layer are favorable for the extraction of emitted light from SnO2 film. Such two effects of TiO2-capping contribute to the aforementioned enhanced EL.
What problem does this paper attempt to address?