Enhancement of Electroluminescence from Tio2/P(+)-Si Heterostructure-Based Devices Through Engineering of Oxygen Vacancies in Tio2

Yuanyuan Zhang,Xiangyang Ma,Peiliang Chen,Dongsheng Li,Xiaodong Pi,Deren Yang,P. G. Coleman
DOI: https://doi.org/10.1063/1.3276547
IF: 4
2009-01-01
Applied Physics Letters
Abstract:We report that electroluminescence (EL) from TiO2/p+-Si heterostructure-based devices can be significantly enhanced through a prior treatment of TiO2 films in argon (Ar) plasma. It is found that the Ar-plasma treatment introduces excess oxygen vacancies within a certain depth of TiO2 films. The increase in the concentration of oxygen vacancies leads to the enhancement of EL from TiO2/p+-Si heterostructure-based devices because oxygen vacancies are the light-emitting centers. This work demonstrates the use of defect engineering to improve the performance of oxide-based optoelectronic devices.
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