Ar Plasma Treatment Enhancing EL from the TiO2 ∶Er/p+-Si Heterostructured Device

Zhifei GAO,Chen ZHU,Xiangyang MA,Deren YANG
DOI: https://doi.org/10.14136/j.cnki.issn 1673-2812.2017.04.002
2017-01-01
Abstract:In our previous work[1],the electroluminescence (EL) from the Er-doped TiO2 (TiO2 ∶ Er) film on heavily boron-doped silicon (p+-Si) thus forming the TiO2 ∶ Er/p+-Si heterostructured device.In this work,the effect of argon (Ar) plasma treatment of TiO2 ∶ Er film on the EL from the TiO2 ∶ Er/p+-Si heterostructured device.It is found that such Ar plasma treatment enhances not only the Er-related visible and near-infrared EL but also the oxygen-vacancy-related EL from the TiO2 host.The oxygen vacancy concentration in the TiO2 ∶ Er film is remarkably increased by the Ar plasma treatment,which enhances the oxygen-vacancy-related EL and,moreover,facilitates the energy transfer from the TiO2 host to the Er3+ ions via the oxygen vacancies that act as the sensitizers,thus leading to the enhanced Er-related EL.
What problem does this paper attempt to address?