Near-Infrared Electroluminescence From Light-Emitting Devices Based On Nd-Doped Tio2/P(+)-Si Heterostructures

yang yang,chunyan lv,chen zhu,si li,xiangyang ma,deren yang
DOI: https://doi.org/10.1063/1.4879023
IF: 4
2014-01-01
Applied Physics Letters
Abstract:We report on near-infrared (NIR) electroluminescence (EL) from the light-emitting devices based on Nd-doped TiO2/p(+)-Si heterostructures. NIR emissions peaking at similar to 910, 1090, and 1370 nm, originated from intra-4f transitions in Nd3+ ions, can be activated by a forward bias voltage as low as similar to 5V. Such NIR EL is triggered by the energy transferred from TiO2 host to Nd3+ ions. It is found that the coexistence of anatase and rutile phases in the TiO2 host enables the device to exhibit pronounced Nd-related EL without concurrent emission from the TiO2 host itself, quite other than the case of existing only anatase phase in TiO2 host. We tentatively suggest that the anatase/rutile interface states play important role in the energy transfer from TiO2 host to Nd3+ ions. (C) 2014 AIP Publishing LLC.
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