Abstract:In this paper, we report on the luminescence-center (LC)-mediated excitation of Er3+ as a function of annealing temperature in Er-doped Si-rich SiO2 (SRO) films fabricated by electron beam evaporation. It is found that the annealing temperature has significant effects on the emission of Er3+ and the specific optical-active point-defects called LCs within Er-doped SRO films. Different luminescence centers generated by the evolution of microstructures during annealing process act as efficient sensitizers for Er3+ in the films when the annealing temperature is below 1100 °C. Moreover, the temperature dependence of the energy coupling between LCs and Er3+ demonstrates the effective phonon-mediated energy transfer process. In addition, when the annealing temperature reaches 1100 °C, the decreased density of activable erbium ions induced by the aggregation of Er will bring detrimental effects on the emission of Er3+. It is demonstrated that an appropriate annealing process can be designed to achieve efficiently enhanced emissions from Er3+ ions by optimizing the density of LCs and the coupling between Er3+ and LCs.

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Enhancement of Sensitized Photoluminescence of Erbium Chloride Silicate Through Regulating Annealing

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Enhanced Crystallization and Sensitization of Si Nanocrystals in Al2O3:Er/Si:Er Multilayers

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

The Modulation on Luminescence of Er3+-doped Silicon-Rich Oxide Films by the Structure Evolution of Silicon Nanoclusters.

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers

Evolution of the Sensitized Er 3+ Emission by Silicon Nanoclusters and Luminescence Centers in Silicon-Rich Silica