Abstract:In the past years, light-emitting devices (LEDs) based on erbium (Er)-doped insulators or wide-bandgap semiconductors have received intensive attention because the intra-4f transition (4I13/2→4I15/2) of Er3+ ions at ～ 1540 nm has potential applications in the optical interconnection for silicon-based circuits. The LEDs with rare-earth (RE)-doped SiOx (x ≤ 2) or SiNx (x ≤ 4/3) films have been well investigated as the silicon-compatible emitters. However, they suffer difficulty in injecting current and easing fatigue. In this context, the LEDs with RE-doped oxide semiconductors have been extensively investigated out of research interest in recent years. Among the oxide semiconductors, TiO2 is a desirable host for RE-doping because it is transparent for visible and infrared light, and cost-effective, and has considerably high RE solubility. In our previous work (Zhu C, Lü C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl. Phys. Lett. 107 131103), we have realized erbium (Er)-related visible and near-infrared (～ 1540 nm) electroluminescence (EL) from the LED with a structure of ITO/TiO2:Er/SiO2/n+-Si, in which TiO2:Er refers to the Er-doped TiO2 film as the light-emitting layer. In this work, we co-dope ytterbium (Yb) into the TiO2:Er film in the aforementioned LED to significantly enhance the Er-related visible and near-infrared EL. It is revealed that a certain amount of Yb co-doping enables the TiO2:Er film to transform its crystal phase from anatase to rutile. Such a phase transformation reduces the symmetry of crystal field surrounding the Er3+ ions incorporated into the TiO2 host. Moreover, the substitution of over-sized Yb3+ ions for Ti4+ ions in the TiO2 host leads to the distortion of the crystal field around the Er3+ ions. The aforementioned symmetry-reduction and distortion of the crystal field increase the probabilities of the intra-4f transitions of Er3+ ions. Due to the aforementioned reason, the Yb co-doping into the TiO2:Er film remarkably enhances the EL from the corresponding LED. It is believed that the strategy of Yb-codoping can be adopted to enhance the EL from the LEDs with other RE-doped TiO2 films.

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part II: Photoluminescence

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Enhanced Luminescence of Erbium Silicate: Interstitial Lithium Directly Regulates the Lattice Structure of Erbium Compound Crystals

Extraordinary Infrared Photoluminescence Efficiency of Er0.1Yb1.9SiO5 Films on SiO2/Si Substrates

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Spectroscopic Properties Of Er3+ And Yb3+ Co-Doped Glass Ceramics Containing Srf2 Nanocrystals

Electroluminescence from Light-Emitting Devices with Erbium-Doped Tio2 Films: Enhancement Effect of Yttrium Codoping

[Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Film and Er-doped Silicon-Rich Silicon Nitride Film and Its Annealing Behavior].