Abstract:An Erbium doped light emitting device characterized with long-term reliability has been realized. The devices are based on npn heterojunction structure which are composed of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}$ </tex-math></inline-formula> -Si/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si/Er-doped <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> -ZnO. The electroluminescence intensity of Er3+ ions has a well linear relation with operating currents. Meanwhile, the Er3+ ions electroluminescence device with a 3 V onset voltage can keep on operating for more than 1200 hours, attributed to the separation of supply and acceleration of electrons which excite Er3+ ions. Electrons originated from the former <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}{p}$ </tex-math></inline-formula> junction diffuse through <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si layer, then they are accelerated in the following space charge region of the latter pn junction to collide with Er3+ ions in ZnO layer. Moreover, the npn heterojunction device structure is also applicable to other rare earths such as Tm, Eu, etc. This strategy will pave a way to electroluminescence of rare earths, and also provide a monolithic silicon light source to integrated silicon photonics.

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Low Driving Voltage and High Reliability 1.54 Μm Electroluminescence from SnO2:Er/p-Si Heterostructured Devices Via Energy Transfer Effect

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Enhanced Luminescence of Erbium Silicate: Interstitial Lithium Directly Regulates the Lattice Structure of Erbium Compound Crystals

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Enhancement of Sensitized Photoluminescence of Erbium Chloride Silicate Through Regulating Annealing

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Highly Efficient Electroluminescence from SnO2 Nanocrystals and Er3+ Co-Doped Silica Thin Film Via Introducing Ca2.

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Low-voltage Driven ∼1.54 Μm Electroluminescence from Erbium-Doped ZnO/p+-Si Heterostructured Devices: Energy Transfer from ZnO Host to Erbium Ions

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films