Abstract:We report on erbium (Er) related electroluminescence (EL) in the visible and near infrared (NIR) regions from the light-emitting device (LED) based on the Er-doped ZnO (ZnO:Er)/n-Si isotype heterostructure formed by sputtering ZnO:Er film on n-Si/n(+)-Si epitaxial wafer. Herein, the ZnO:Er film exhibits n-type in electrical conduction. The aforementioned LED is electroluminescent only under sufficiently high forward bias with the negative voltage connecting to n(+)-Si substrate. Such forward bias enables the electrons from n-Si to enter into the ultra-thin SiOx (x <= 2) layer inherently existing between the ZnO:Er film and n-Si via Poole-Frenkel conduction mechanism and, subsequently, to drift into the ZnO:Er film thus becoming hot electrons, which impact-excite the Er3+ ions to emit characteristic visible and NIR light. Furthermore, the Er-related EL from the aforementioned LED can be significantly enhanced through adopting the strategy of co-doping F ions into the ZnO host, which brings about twofold primary effects. Firstly, due to the atomic size compensation between F and Er3+ ions, the ZnO crystal grains become larger to accommodate much more optically active Er3+ ions. Secondly, the partial substitution of F ions for O2- ions around the Er3+ ion reduces the symmetry of pseudo-octahedral crystal field of Er3+ ion, thus increasing the probabilities of intra-4f transitions of Er3+ ions. We believe that this work sheds light on developing efficient silicon-based LEDs using the Er-doped oxide semiconductors. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

The Modulation on Luminescence of Er3+-doped Silicon-Rich Oxide Films by the Structure Evolution of Silicon Nanoclusters.

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Different Effect of Nanocrystals on the Electroluminescence and Photoluminescence in Er-doped SiO2 Films

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Light Emission and Charge Trapping in Er-doped Silicon Dioxide Films Containing Silicon Nanocrystals

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon