Abstract:In order to investigate deeply the luminescent mechanism of amorphous oxygenated Silicon nitride(a-SiNx∶O)film,the a-SiNx∶O thin films were prepared by plasma enhanced chemical vapor deposition(PECVD)at room temperature.By adjusting the flow rate ratio(R)of silane(SiH4)to ammonia(NH3),photoluminescence(PL)with peak position tunable in the visible range from 2.06 to 2.79 eV can be realized.In absorption spectra of a-SiNx∶O films,the location of absorption peaks were in good agreement with those of corresponding PL.It suggested that the PL originates from radiative recombination at luminescent defect state.Based on the calculation of the energy distance between optical absorption edge and the position of absorption peak,the location of this luminescent defect state was determined to be about 0.65 eV underneath the absorption edge.From the analysis on bonding concentration in Fourier transform infrared(FTIR)spectra and the deconvolution of Si 2p peak in X-ray photoelectron spectra(XPS),it was found that the enhancement of PL was proportional to the increase of N-Si-O bonding concentration.Both of the PL intensity and N-Si-O bonding concentration reached the maximum when R=1∶4.The experimental results further certified that luminescent defect state in a-SiNx∶O film was closely related to N-Si-O bonding configuration.Finally,an energy band model for photoluminescence of a-SiNx∶O films was constructed.The carriers were pumped to the exited states,and then relaxed to energy levels of defect states,afterwards recombined via transition between defect state levels and valence band maximum to emit photons.In addition,the phenomenon of the redshift of PL peak with the increase of the flow rate ratio R may arise from two possible reasons,i.e.the shifting of energy level at the maximum position of density of defect state caused by the transformation of N-Si-O bonding configuration and upward shift of valence band maximum arising from the reduction of optical band gap.

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Photoluminescence of Si-Rich Silicon Nitride: Defect-Related States and Silicon Nanoclusters

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Enhanced Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices by Nh3 Plasma and Annealing Treatment

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Investigation on luminescent defect state related to N-Si-O bondingin amorphous oxygenated Silicon nitride film

Photoluminescence of Tb3+-doped SiNx films with different Si concentrations

Photoluminescence study of Si oxide films with different Si-rich degrees

Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon

Photoluminescence with Ultra-wide Spectrum from Radiative Defects in Si-rich SiNx

Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Photoluminescence of Amorphous Si Films Prepared by AtmosphericPressure Chemical Vapor Deposition

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Surface Plasmon Enhanced Electroluminescence of SiNx Film Based MIS Device

Electroluminescense and photoluminescense of nano-crystalline Si:H films

Nanocrystal and Interface Defects Related Photoluminescence in Silicon-Rich Al2O3 Films

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films