Abstract:Silicon-rich silicon nitride film was deposited by plasma enhanced chemical vapor deposition (PECVD) on (100)-oriented monocrystalline silicon, according to silicon solar cell process. Photoluminescence (PL) performance of the films at annealing temperatures in N 2 ambient was studied, showing that temperatures had great effect on the characteristics. Excited by 325 nm line, PL from defect-related states was only observed in the film and Si clusters has not been formed at annealing temperature 900°C. After annealed at different temperature, PL intensity decreased with increasing temperature. PL peak originated from defect energy Si dangling bond (K center). In this work, At 900°C, disappearance of PL peak was attributed to increasing non-radiation recombination and silicon clusters has not been formed. Structure of silicon nitride has been measured by X-ray photo-electron spectroscopy (XPS) showing binding energy at 101.8 eV and indicated that silicon phase has not been separated from silicon nitride. Infrared (FTIR) measurement provided a good confirm to PL analysis.

Enhanced Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices by Nh3 Plasma and Annealing Treatment

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Surface Plasmon Enhanced Electroluminescence of SiNx Film Based MIS Device

Improved Electroluminescence from Silicon Nitride Light Emitting Devices by Localized Surface Plasmons

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Effect of Scattering from Localized Surface Plasmon Resonance on Improving the Luminescence Efficiency of Silicon Nitride Light-Emitting Devices

Enhancing the Photoluminescence Intensity of Silicon-Rich Nitride Film by Localized Surface Plasmon Enhanced Photo-Excitation

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Luminescence Properties of Silicon-Rich Silicon Nitride Films and Light Emitting Devices

Evolution of Electroluminescence from Silicon Nitride Light-Emitting Devices Via Nanostructural Silver

Electroluminescence from Si Nanocrystals by Annealing Amorphous Silicon Carbide Films

Improved Photoluminescence of Silicon Nanocrystals in Silicon Nitride Prepared by Ammonia Sputtering

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Electroluminescence from Au/Si Nitride Film/si with the Film Prepared by Electron Cyclotron Resonance Method

Surface plasmon enhanced light emission of silicon-rich silicon nitride: Dependence on metal island size

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon