Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

Growth of photoluminescent nanometer Si-SiOx films by reactive evaporation

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Annealing and excitation dependent photoluminescence of silicon rich silicon nitride films with silicon quantum dots

Photoluminescence study of Si oxide films with different Si-rich degrees

Comparative Study on Photoluminescence from Si-Containing Silicon Oxide Films and Ge-Containing Silicon Oxide Films

Photoluminescences and Structrue Performances of Si-Rich Silicon Nitride Thin Films Containing Si Quantum Dots

Properties of Silicon Quantum Dots Embedded in Silicon Nitride Deposited by Magnetron Co-Sputtering

Low-plasma and high-temperature PECVD grown silicon-rich SiO(x) film with enhanced carrier tunneling and light emission

Structural Evolution And Photoluminescence Of Annealed Si-Rich Nitride With Si Quantum Dots Prepared By Plasma Enhanced Chemical Vapor Deposition

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Porous Nc-Si/siox Nanostructured Layer on Si Substrate with Tunable Photoluminescent Properties Fabricated by Direct, Precursor-Free Microplasma Irradiation in Air

Enhanced Visible Photoluminescence from Nc-Si/Siox Films Deposited by Electron Beam Evaporation

Properties of Si-rich SiO2 Films by RF Magnetron Sputtering

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Nanocrystal and Interface Defects Related Photoluminescence in Silicon-Rich Al2O3 Films

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane