Abstract:Er doped Si/Al2O3 multilayer films were grown by pulsed laser deposition(PLD)and post annealed by RTA.The room temperature Er-related PL spectra were observed under excitation of the Ar+ 476 nm laser which is not Er3+ resonant pumping.This means that in the films there are indirect excitations to Er3+ luminescence and the nanosilicons produced by RTA must be sensitisers.By analyzing the PL peak intensity at 1.54 μm as a function of annealing temperature,it is found that the film annealed at 700 ℃ gets the strongest photoluminescence which is 39 times higher than that of the Er doped Al2O3 reference film produced by the same method.Furthermore,the Raman scattering spectra shows that in the film annealed at 700 ℃ the silicon is still amorphous,but therein some Si nanoclusters which are effective sentitisers to Er3+ luminescence have already appear.Then,after the films are annealed at temperatures above 700 ℃,the Si-nanoclusters crystallize increasingly well and meanwhile the sizes of Si-nanocrystals become bigger and bigger leading to the number of effective sensitisers decrease.This phenomenon causes the decline of Er3+ PL intensity.It shows that the optimal annealing temperature is 700 ℃ which is far below the annealing temperature required for Er-doped samples containing Si-nanocrystal.

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