Abstract:A degradation of crystalline silicon surface passivation provided by aluminum oxide (Al2O3) is generally observed after plasma processes, e.g., deposition of amorphous silicon nitride. To minimize such detrimental effect, a better understanding of the interaction between plasma species and the Al2O3 layer is required. Using in situ photoluminescence, the passivation quality of as‐deposited and annealed crystalline silicon wafers coated with Al2O3 grown by atomic layer deposition is characterized in real time during argon‐hydrogen plasma exposure. The photoluminescence intensity of as‐deposited samples instantly steps up after the plasma ignition, and then it gradually decreases as a function of plasma exposure time. However, only degradation of photoluminescence signal can be found if the samples are annealed prior to the plasma treatment. The interaction between vacuum UV light from plasma and different types of chemical bonds in the Al2O3 layer is proposed to explain the obtained results. Understanding the mechanisms and root cause leading to different behavior between as‐deposited and annealed samples under plasma exposure is a first step toward redesigning the process flow for better surface passivation. Using in situ photoluminescence, the passivation of as‐deposited and annealed Al2O3 coated c–Si is characterized during argon‐hydrogen plasma exposure. An increase of PL intensity, followed by a gradual degradation is observed on as‐deposited samples, while only degradation is observed on annealed ones. The interaction between UV‐plasma emission and different chemical bonds at Al2O3/c–Si interface is proposed to explain the results.

Study on Photoluminescence from Anodic Alumina Films Formed on Silicon Substrate

Light Emission from Silicon-Based Porous Anodic Alumina Formed in 0.5 M Oxalic Acid

Strong ultraviolet and violet photoluminescence from Si-based anodic porous alumina films

Preparation and Photoluminescence Properties of Eu3+-Doped Al2O3 Films on Silicon Substrates by the Sol-gel Method

On the Origin of Light Emission from Porous Anodic Alumina Formed in Sulfuric Acid

Al-assisted Anodic Etched Porous Silicon

Photoluminescence of a Silicon Oxide Film Formed by Anodization in the Electropolishing Region in HF Solution

Nanoscale Islands and Color Centers in Porous Anodic Alumina on Silicon Fabricated by Oxalic Acid

Nanocrystal and Interface Defects Related Photoluminescence in Silicon-Rich Al2O3 Films

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Strong Blue Emission from Anodic Alumina Membranes with Ordered Nanopore Array

Optical Emission from Silicon-Based Sio2 Islands Fabricated by Anodic Alumina Templates

The Origin of Visible Photoluminescence from Silicon Oxide Thin Films Prepared by Dual-Plasma Chemical Vapor Deposition

Color Centers Vs Electrolytes for Si-based Porous Anodic Alumina

Photoluminescence of Amorphous Si Films Prepared by AtmosphericPressure Chemical Vapor Deposition

In Situ Fabrication of Alumina Nanotube Array and Photoluminescence

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Annealing Environment Effect on the Nanocrystalline Silicon Related Photoluminescence in Silicon Rich Alumina Films

Photoluminescence from 8-Hydroxy Quinoline Aluminum Embedded in Porous Anodic Alumina Membrane

In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide