Photoluminescence Properties of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

XL Wu,XY Yuan,S Tong,Y Gu,XM Bao,GG Siu,D Feng
DOI: https://doi.org/10.1016/s0038-1098(98)00240-3
IF: 1.934
1998-01-01
Solid State Communications
Abstract:Photoluminescence (PL) properties of alternating hydrogenated nanocrystalline silicon/amorphous silicon multilayers were investigated at room temperature and low temperature (77 K). The room-temperature PL spectra clearly show two peaks at about 1.54 and 1.7 eV. The ∼1.7 eV peak has no crystallite size dependence of the peak energy. The low-temperature PL spectra can be decomposed into three bands peaked at 1.53, 1.58 and 1.65 eV. The 1.53 eV band is related to the growth process of our samples. The 1.58 eV band is believed to be related to a-Si : H tissue. For the 1.65 eV band, spectral analysis indicates that the radiative recombination of photogenerated carriers in the near-surface region of nanocrystallites is responsible for the visible PL band.
What problem does this paper attempt to address?